Semiconductor device and operating method thereof

ABSTRACT

A semiconductor device includes: a non-volatile memory including a normal region, a self-repair region and a redundancy region, each having a plurality of cells; a first boot-up control block suitable for controlling a first boot-up operation to detect defective cells of the normal region and store a defective address in a first latch unit; a self-program control block suitable for controlling a self-program operation to program the defective address stored in the first latch unit into the self-repair region; and a second boot-up control block suitable for controlling a second boot-up operation to read out data of the normal region based on an input address while reading out data of the redundancy region instead of the data of the normal region when data of the self-repair region coincides with the input address.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. patent application Ser. No.16/736,537 filed on Jan. 7, 2020, which is a division of Ser. No.15/971,591 filed on May 4, 2018 and issued on Feb. 11, 2020 as U.S. Pat.No. 10,559,375, which claims benefits of priority of Korean PatentApplication No. 10-2017-0129848 filed on Oct. 11, 2017. The disclosureof each of the foregoing application is incorporated herein by referencein its entirety.

BACKGROUND 1. Field

Various exemplary embodiments of the present invention relate to asemiconductor design technique, and more particularly, to asemiconductor device that transmits data from a non-volatile memory to alatch circuit, and an operating method for the semiconductor device.

2. Description of the Related Art

A semiconductor integrated circuit is provided with a redundancy circuitto repair a defective circuit included therein.

In particular, when integrating a large number of memory cells in asingle chip of a limited size in accordance with the high integration ofa semiconductor integrated circuit, a non-volatile memory for storinginformation of a defective memory cell and redundancy cells forreplacing the defective memory cell during a repair operation may beprovided.

Recently, a method of programming repair information not only at a waferlevel but also at a package level has been proposed by using an arrayE-fuse (ARE) circuit, in which unit fuse cells are arranged in an arrayand implemented by nonvolatile memory cells.

In order to use fuse data stored in the ARE circuit, a boot-up operationis required for providing the fuse data from the ARE circuit to a latchcircuit. In general, E-fuses in the ARE circuit respectively correspondwith unit latches of the latch circuit thereby respectively providingthe fuse data of the E-fuses to the unit latches during the boot-upoperation.

After the boot-up operation, the semiconductor device may perform therepair operation by using the fuse data stored in the latch circuit.

Furthermore, because of high density integration of a semiconductormemory device due to an increase in cell density and a reduction in anoccupying area, a yield of the semiconductor memory device becomes moreand more difficult to be secured. In order to solve this problem, thenumber of redundancy cells is increased. However, the increase of thenumber of redundancy cells leads to the high density integration of theARE circuit, which causes an increase of failures due to processdefects.

Even though a defect occurs in an ARE circuit, there is no scheme ofrepairing the defect and it is difficult to find the location of thedefect, which leads to a yield loss.

SUMMARY

Various embodiments of the present invention are directed to asemiconductor device capable of detecting defective fuse cells of anon-volatile memory and self-repairing the defective fuse cells during aboot-up operation, and an operating method for the semiconductor device.

In accordance with an embodiment of the present invention, asemiconductor device includes: a non-volatile memory including a normalregion, a self-repair region and a redundancy region, each having aplurality of cells; a first boot-up control block suitable forcontrolling a first boot-up operation to detect defective cells of thenormal region and store a defective address in a first latch unit; aself-program control block suitable for controlling a self-programoperation to program the defective address stored in the first latchunit into the self-repair region; and a second boot-up control blocksuitable for controlling a second boot-up operation to read out data ofthe normal region based on an input address while reading out data ofthe redundancy region instead of the data of the normal region when dataof the self-repair region coincides with the input address.

In accordance with an embodiment of the present invention, asemiconductor device includes: a non-volatile memory including a normalfuse region, a self-repair fuse region and a redundancy fuse region,each having a plurality of fuse cells; an operation control blocksuitable for reading out normal fuse data of the normal fuse region andprogramming an defective address, which is stored in a latch unit duringa self-rupture operation, into the self-repair fuse region during afirst boot-up operation, and for sequentially reading out self-fuse dataof the self-repair fuse region and the normal fuse data of the normalfuse region while reading out redundancy fuse data of the redundancyfuse region instead of the normal fuse data based on an redundancyenable signal during a second boot-up operation; an error detectionblock suitable for detecting defective fuse cells of the normal fuseregion based on the normal fuse data, which is read out during the firstboot-up operation and storing the defective address in the latch block;and a comparison block suitable for comparing the self-fuse data, whichis read out during the second boot-up operation, with an input addressand activating the redundancy enable signal when the self-fuse datacoincides with the input address as a result of the comparison.

In accordance with an embodiment of the present invention, an operatingmethod for a semiconductor device includes: providing a non-volatilememory including a normal region, a self-repair region and a redundancyregion, each having a plurality of cells; performing a first boot-upoperation to detect defective cells of the normal region and store adefective address in a latch block; performing a self-program operationto program the defective address stored in the latch block into theself-repair region; and performing a second boot-up operation tosequentially read out data of the normal region based on an inputaddress while outputting data of the redundancy region instead of thedata of the normal region when data of the self-repair region coincideswith the input address.

In accordance with an embodiment of the present invention, an operatingmethod for a semiconductor device includes: a fuse unit including a fuseregion, a redundancy fuse region and a defective information region; adefective fuse detection unit suitable for detecting a defective fuseportion in the fuse region, and storing a defective information into thedefective information region according to the detection; and a repairunit suitable for storing a defective memory address into the fuseregion except for the defective fuse portion for repair of a defectivememory cell based on the defective memory address stored in the fuseunit, wherein the repair unit is further suitable for storing thedefective memory address into a redundancy fuse portion in theredundancy fuse region instead of the defective fuse portion accordingto the defective information.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a semiconductor device inaccordance with an embodiment of the present invention.

FIG. 2 is a timing diagram illustrating an operation of a semiconductordevice shown in FIG. 1.

FIG. 3 is a block diagram illustrating a semiconductor device for a rowrepair in accordance with an embodiment of the present invention.

FIG. 4 is a diagram illustrating a coupling of a non-volatile memory andperipheral constituents shown in FIG. 3.

FIGS. 5A and 5B are a flowchart and a block diagram, respectively,illustrating a pre-boot-up operation of the semiconductor device shownin FIG. 3.

FIGS. 6A and 6B are a flowchart and a block diagram, respectively,illustrating a self-rupture operation of the semiconductor device shownin FIG. 3.

FIGS. 7A and 7B are a flowchart and a block diagram, respectively,illustrating a post-boot-up operation of the semiconductor device shownin FIG. 3.

FIGS. 8A and 8B are a flowchart and a block diagram, respectively,illustrating a normal rupture operation of the semiconductor deviceshown in FIG. 3.

FIG. 9 is a block diagram illustrating a semiconductor device for acolumn repair in accordance with an embodiment of the present invention.

FIG. 10 is a diagram illustrating a coupling of a non-volatile memoryand peripheral constituents shown in FIG. 9.

FIG. 11 is a block diagram illustrating a pre-boot-up operation of asemiconductor device shown in FIG. 9.

FIG. 12 is a block diagram illustrating a self-rupture operation of asemiconductor device shown in FIG. 9.

FIG. 13 is a block diagram illustrating a post-boot-up operation of asemiconductor device shown in FIG. 9.

FIG. 14 is a block diagram illustrating a normal rupture operation of asemiconductor device shown in FIG. 9.

DETAILED DESCRIPTION

Various embodiments of the present invention will be described below inmore detail with reference to the accompanying drawings. Theseembodiments are provided so that this disclosure is thorough andcomplete. All “embodiments” referred to in this disclosure refer toembodiments of the inventive concept disclosed herein. The embodimentspresented are merely examples and are not intended to limit the scope ofthe invention.

Moreover, it is noted that the terminology used herein is for thepurpose of describing the embodiments only and is not intended to belimiting of the invention. As used herein, singular forms are intendedto include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including” when used inthis specification, indicate the presence of stated features, but do notpreclude the presence or addition of one or more other non-statedfeatures. As used herein, the term “and/or” indicates any and allcombinations of one or more of the associated listed items. It is alsonoted that in this specification, “connected/coupled” refers to onecomponent not only directly coupling another component but alsoindirectly coupling another component through an intermediate component.

It will be understood that, although the terms “first”, “second”,“third”, and so on may be used herein to describe various elements,these elements are not limited by these terms. These terms are used todistinguish one element from another element. Thus, a first elementdescribed below could also be termed as a second or third elementwithout departing from the spirit and scope of the present invention.

The drawings are not necessarily to scale and, in some instances,proportions may have been exaggerated in order to clearly illustratefeatures of the embodiments.

FIG. 1 is a block diagram illustrating a semiconductor device inaccordance with an embodiment of the present invention.

Referring to FIG. 1, the semiconductor device may include a non-volatilememory 10, a pre-boot-up control block 20, a self-program control block30, and a post-boot-up control block 40.

The non-volatile memory 10 may be provided as an array E-fuse (ARE)circuit. The non-volatile memory 10 may be any one of a NAND flashmemory, a NOR flash memory, an electrically programmable read onlymemory (EPROM), an electrically erasable and programmable ROM (EEPROM),a ferroelectric random access memory (FRAM), a magnetic random accessmemory (MRAM), etc.

For describing a basic concept of the present invention, a configurationfor controlling the non-volatile memory 10 is omitted from descriptionsof the semiconductor device shown in FIG. 1.

For example, the non-volatile memory 10 as the array E-fuse circuit mayinclude a plurality of unit fuse cells (not illustrated) disposed atcross points of row lines and column lines, and although addresssignals, and row and column control signals are required to control theunit fuse cells, descriptions thereof are omitted herein.

When the semiconductor device shown in FIG. 1 is a memory device, thesemiconductor device may further include as a data storage media, amemory array region 60 and a latch circuit 70. The memory array region60 may include a normal cell region 62 for storing data and a redundancycell region 64 for repairing defective cells of the normal cell region62.

The non-volatile memory 10 as the array E-fuse circuit may include anormal region 12, a self-repair region 14, and a redundancy region 16,each having a plurality of unit cells.

The normal region 12 may permanently store information (e.g., addressinformation) on the defective cells of the normal cell region 62regardless of power-on/off, and may be composed to correspond one-to-onewith the redundancy cell region 64 of the memory array region 60.

The self-repair region 14 may permanently store information (e.g.,address information) on defective cells in the normal region 12.

The redundancy region 16 may be formed to replace the defective cells inthe normal region 12, and may permanently store the defective address ofthe defective cells in the normal cell region 62 instead of thedefective cells in the normal region 12.

The pre-boot-up control block 20 may detect the defective cells in thenormal region 12 and control a pre-boot-up operation for storing theinformation on the detected defective cells, i.e., a defective address.The pre-boot-up operation may be performed in an initial state where thenon-volatile memory 10 is not programmed.

The pre-boot-up control block 20 may include an error detection unit 22and a first latch unit 24.

The error detection unit 22 may receive data FZDATA_N from the normalregion 12 and generate an error flag signal FLAG when the defectivecells are detected in the normal region 12. During the pre-boot-upoperation, the data FZDATA_N from the normal region 12 have apredetermined initial value if a corresponding fuse cell is notdefective in the normal region 12.

The first latch unit 24 may store as a defective address LADD an inputaddress ADD, which is inputted when the error flag signal FLAG isgenerated.

The pre-boot-up control block 20 may perform the pre-boot-up operationbased on a pre-boot-up signal BU_PRE, and may output a boot-uptermination signal BU_END when the pre-boot-up operation is completed.

The pre-boot-up control block 20 may output a final flag signal FFLAGaccording to the generated error flag signal FLAG.

The self-program control block 30 may control a self-program operationfor programming into the self-repair region 14 the defective addressLADD, which corresponds to the defective fuse cell in the normal region12 and is provided from the first latch unit 24.

The self-program operation may be performed in response to the finalflag signal FFLAG and the boot-up termination signal BU_END. That is,when a defective fuse cell is detected during the pre-boot-up operation,the self-program control block 30 may voluntarily program into theself-repair region 14 the defective address LADD of the defective fusecell during the self-program operation. The defective address LADD ofthe defective fuse cell may be provided as data FZDATA_S from theself-repair region 14 during the post-boot-up operation.

The post-boot-up control block 40 may read out the data FZDATA_N of thenormal region 12 based on the input address ADD while comparing theinput address ADD with the defective address LADD of the defective fusecell provided as data FZDATA_S from the self-repair region 14. When theinput address ADD coincides with the data FZDATA_S of the self-repairregion 14, the post-boot-up control block 40 may control a post-boot-upoperation for outputting data FZDATA_R of the redundancy region 16instead of the data FZDATA_N of the normal region 12. The data FZDATA_Rmay be read out from a redundant fuse cell, with which the defectivefuse cell of the defective address LADD is replaced, in the redundancyregion 16.

The post-boot-up control block 40 may perform the post-boot-up operationin response to a post-boot-up signal BU_POST. The post-boot-up operationmay be performed after the self-program operation.

The post-boot-up control block 40 may include a second latch unit 42, afirst comparison unit 44, and a first path control unit 46.

The second latch unit 42 may store the defective address LADD, whichrepresents the defective fuse cell of the normal region 10 andprogrammed as the data FZDATA_S into the self-repair region 14. Thefirst latch unit 24 and the second latch unit 42 may be composed of thesame latch circuit.

The first comparison unit 44 may compare the defective address LADDstored in the second latch unit 42 with the input address ADD, and maygenerate a redundancy enable signal REDEN when the defective addressLADD coincides with the input address ADD.

The first path control unit 46 may sequentially read out the dataFZDATA_N of the normal region 12. However, when the redundancy enablesignal REDEN is generated, the first path control unit 46 may controloutputting to the latch circuit 70 the data FZDATA_R of the redundancyregion 16 instead of the data FZDATA_N of the normal region 12.

The latch circuit 70 may store data FZDATA, which is one of the dataFZDATA_N of the normal region 12 and the data FZDATA_R of the redundancyregion 16, outputted from the first path control unit 46.

The semiconductor device may further include a normal program controlblock 50.

The normal program control block 50 may perform a normal programoperation for programming target data FZDATA_IN inputted from anexternal device into the non-volatile memory 10 after the pre-boot-upoperation, the self-program operation and the post-boot-up operation areperformed.

The target data FZDATA_IN may represent defective addresses of thedefective cells of the normal cell region 62, which are detected as aresult of a test operation performed on the memory array region 60.

The normal program control block 50 may program the target dataFZDATA_IN into the normal region 12 based on the input address ADD whilecomparing the input address ADD with the defective address LADD of thedefective fuse cell provided as data FZDATA_S from the self-repairregion 14. When the input address ADD coincides with the data FZDATA_Sof the self-repair region 14, the normal program control block 50 maycontrol a program operation of programming the target data FZDATA_INinto the redundancy region 16 instead of the normal region 12.

The normal program control block 50 may perform the normal programoperation in response to a program enable signal RUP_EN.

The normal program control block 50 may include a third latch unit 52, asecond comparison unit 54, and a second path control unit 56.

The third latch unit 52 and the second comparison unit 54 may havesubstantially the same structures as the second latch unit 42 and thefirst comparison unit 44, respectively. According to an embodiment, thethird latch unit 52 and the second latch unit 42 may be composed of thesame latch circuit, and the second comparison unit 54 and the firstcomparison unit 44 may be composed of the same comparison circuit.

The second path control unit 56 may program the target data FZDATA_INinto the normal region 12 based on the input address ADD. However, whenthe redundancy enable signal REDEN is generated, the second path controlunit 56 may control a program operation of programming the target dataFZDATA_IN into the redundancy region 16 instead of the normal region 12.

As described above, the non-volatile memory 10 as the ARE circuit mayfurther include the self-repair region 14 and the redundancy region 16in addition to the normal region 12. When the defects occur in thenormal region 12, the address of the defective cells of the normalregion 12 may be stored in the self-repair region 14, and the defectivecells of the normal region 12 may be repaired using the cells of theredundancy region 16 according to the address of the defective cellsstored in the self-repair region 14. Accordingly, as the defective cellsof the normal region 12 are replaced with the cells of the redundancyregion 16, a yield of the semiconductor device may be improved.

FIG. 2 is a timing diagram illustrating an operation of thesemiconductor device shown in FIG. 1.

Referring to FIG. 2, the semiconductor device may sequentially performthe pre-boot-up operation in step S210, the self-program operation instep S220, the post-boot-up operation in step S230, a wafer repairoperation in step S240, and a package repair operation in step S250.

The pre-boot-up operation in step S210 may be controlled by thepre-boot-up control block 20 shown in FIG. 1. The pre-boot-up operationin step S210 may be performed to detect a defective cell of the normalregion 12 and store as the data FZDATA_S the defective address LADD ofthe defective fuse cell in the initial state when the non-volatilememory 10 as the ARE circuit is not programmed.

The self-program operation in step S220 may be controlled by theself-program control block 30 shown in FIG. 1. The self-programoperation in step S220 may be performed to program the defective addressLADD into the self-repair region 14. The self-program operation in stepS220 may be performed automatically after the pre-boot-up operation instep S210 is terminated.

The post-boot-up operation in step S230 may be controlled by thepost-boot-up control block 40 shown in FIG. 1. The post-boot-upoperation in step S230 may be performed to read out the data FZDATA_N ofthe normal region 12 based on the input address ADD but to output thedata FZDATA_R of the redundancy region 16 instead of the data FZDATA_Nof the normal region 12 when the input address ADD coincides with thedata FZDATA_S (i.e., the defective address LADD of the defective fusecell in the normal region 10) of the self-repair region 14.

Subsequently, the semiconductor device may store as the target dataFZDATA_IN, defective addresses of the defective cells of the normal cellregion 62, which are detected as the result of the test operationperformed on the memory array region 60, in an external test device.

When the test operation is completed, the semiconductor device mayprogram the defective addresses (i.e., the target data FZDATA_IN) of thedefective cells into the non-volatile memory 10. The defective addresses(i.e., the target data FZDATA_IN) of the defective cells may be storedas one of the data FZDATA_N into the normal region 12 and the dataFZDATA_R into the redundancy region 16 according to a defective fusecell of the normal region 12.

After reading out the data FZDATA from the non-volatile memory 10 duringan initialization operation, i.e., a power-up operation, thesemiconductor device may store the data FZDATA, which is one of the dataFZDATA_N of the normal region 12 and the data FZDATA_R of the redundancyregion 16, in the latch circuit 70 and may perform a repair operation toreplace the defective cells of the normal cell region 62 with the cellsof the redundancy cell region 64 by using the data FZDATA stored in thelatch circuit 70.

The repair operation may be largely divided into the wafer repairoperation in step S240 which is performed in a wafer state and thepackage repair operation in step S250 which is performed in a packagestate.

The wafer repair operation in step S240 may include a memory testoperation in step S242, the normal program operation in step S244, andthe post-boot-up operation in step S246.

During the memory test operation in step S242, the defective addressesof the defective cells in the normal cell region 62 may be detected asthe result of the test operation performed on the memory array region 60at a wafer level. The defective addresses of the defective cells in thenormal cell region 62 may be stored as the target data FZDATA_IN in theexternal test device.

When the memory test operation in step S242 is completed, the normalprogram operation in step S244 may be performed to program the defectiveaddress representing the defective cells in the normal cell region 62into the non-volatile memory 10.

The normal program operation in step S244 may be performed by the normalprogram control block 50 shown in FIG. 1.

The normal program operation in step S244 may be performed to programthe target data FZDATA_IN (i.e., the defective address representing thedefective cells of the normal cell region 62) as the data FZDATA_N intothe normal region 12 of the non-volatile memory based on the inputaddress ADD but to program the target data FZDATA_IN as the dataFZDATA_R in the cells of the redundancy region 16 instead of the cellsof the normal region 12 when the input address ADD coincides with thedefective address LADD (i.e., the data FZDATA_S) stored in theself-repair region 14.

The post-boot-up operation in step S246 may be performed to read out thedata FZDATA, which is one of the data FZDATA_N of the normal region 12and the data FZDATA_R of the redundancy region 16, from the non-volatilememory 10. The post-boot-up operation in step S246 may be performedafter the normal program operation in step S244 is performed.

Since the post-boot-up operation in step S246 is substantially the sameas the post-boot-up operation in step S230, detailed descriptionsthereof are omitted herein.

The package repair operation in step S250 may include the memory testoperation in step S252, the normal program operation in step S254, andthe post-boot-up operation in step S256.

Since the memory test operation in step S252, the normal programoperation in step S254 and the post-boot-up operation in step S256 aresubstantially the same as the memory test operation in step S242, thenormal program operation in step S244 and the post-boot-up operation instep S246, detailed descriptions thereof are omitted herein.

Although FIG. 2 illustrates that the wafer repair operation in step S240and the package repair operation in step S250 are performed only once,the semiconductor device may be tested several times at the wafer levelor a package level, and thus the wafer repair operation and the packagerepair operation may be repeated.

In accordance with an embodiment of the present invention as describedabove, as the defective fuse cells of the normal region 12 included inthe non-volatile memory 10 are replaced with the cells of the redundancyregion 16 through the pre-boot-up operation in step S210, theself-program operation in step S220 and the post-boot-up operation instep S230 before the wafer repair operation in step S240 and the packagerepair operation in step S250 are performed, the yield of thesemiconductor device may be improved.

Hereinafter, a semiconductor device is described along with specificstructures for controlling a non-volatile memory in accordance with anembodiment of the present invention.

FIG. 3 is a block diagram illustrating a semiconductor device for a rowrepair in accordance with an embodiment of the present invention.

Referring to FIG. 3, the semiconductor device may include thenon-volatile memory 110, an operation control block 120 and 130 forcontrolling an operation of the non-volatile memory 110, an errordetection block 140, a comparison block 150, and a latch block 160.

The non-volatile memory 110 may be the same as the non-volatile memory10 described with reference to FIGS. 1 and 2. Hereinafter, it isdescribed as an example that the non-volatile memory 110 is composed ofthe array E-fuse (ARE) circuit. The ARE circuit 110 may include aplurality of fuse cells FC disposed at cross points of row lines WL andcolumn lines BL.

The ARE circuit 110 may include a normal fuse region 112, a self-repairfuse region 114, and a redundancy fuse region 116, each having theplurality of fuse cells FC. The normal fuse region 112, the self-repairfuse region 114 and the redundancy fuse region 116 may correspond to thenormal region 12, the self-repair region 14 and the redundancy region 16shown in FIG. 1, respectively.

In accordance with an embodiment of the present invention, the operationof the semiconductor device may be largely divided into a pre-boot-upoperation, a self-rupture operation, a normal rupture operation, and apost-boot-up operation. The pre-boot-up operation and the post-boot-upoperation may read out data programmed into the ARE circuit 110, and theself-rupture operation and the normal rupture operation may programtarget data into the ARE circuit 110.

The self-rupture operation may be performed automatically according todetection of defective cells in the normal fuse region 112 after thepre-boot-up operation is completed.

The normal rupture operation may be performed in response to a commandinputted from an external device, for example, a rupture enable signalRUP_EN.

The operation control block 120 and 130 may control an operation of theARE circuit 110 based on an input address ADD.

During the pre-boot-up operation, the operation control block 120 and130 may control the ARE circuit 110 to read out normal fuse dataFZDATA_N having predetermined initial values or an error from the normalfuse region 112.

During the self-rupture operation, the operation control block 120 and130 may control the ARE circuit 110 to program a defective address LADDstored in the latch block 160 into the self-repair fuse region 114.

During the post-boot-up operation, the operation control block 120 and130 may control the ARE circuit 110 to read out self-fuse data FZDATA_Sof the self-repair fuse region 114 in order to determine whether theinput address ADD is identical to the defective address LADD of thedefective fuse cell provided as the data FZDATA_S, thereby generating aredundancy enable signal REDEN. Further, the operation control block 120and 130 may control the ARE circuit 110 to read out one of the normalfuse data FZDATA_N of the normal fuse region 112 and redundancy fusedata FZDATA_R of the redundancy fuse region 116 according to theredundancy enable signal REDEN.

During the pre-boot-up operation, the error detection block 140 maydetect defective fuse cells of the normal fuse region 112 based on thenormal fuse data FZDATA_N, which have predetermined initial values or anerror and are read out from the normal fuse region 112, to store in thelatch block 160 the defective address LADD representing the defectivefuse cell in the normal fuse region 112.

In the present invention, the pre-boot-up operation may be performed inan initial state where the ARE circuit 110 is not programmed, that is,before the self-rupture operation is performed. Accordingly, the errordetection block 140 may generate an error flag signal FLAG when thedefective fuse cell that does not have a predetermined initial valueamong the fuse cells of the normal fuse region 112 is detected, and thelatch block 160 may store the input address ADD, which is inputted whenthe error flag signal FLAG is generated, as the defective address LADD.

The error detection block 140 may output a final flag signal FFLAGaccording to the generated error flag signal FLAG.

During the post-boot-up operation, the comparison block 150 may comparethe input address ADD with the self-fuse data FZDATA_S, which is thedefective address LADD of the defective fuse cell in the normal fuseregion 112 and read out from the self-repair fuse region 114, and maygenerate the redundancy enable signal REDEN when the input address ADDcoincides with the self-fuse data FZDATA_S. The post-boot-up operationmay be performed after the ARE circuit 110 is programmed through theself-rupture operation or the normal rupture operation.

During the normal rupture operation, the comparison block 150 maycompare the self-fuse data FZDATA_S (i.e., the defective address LADD ofthe defective fuse cell in the normal fuse region 112) stored in thelatch block 160 with the input address ADD and may generate theredundancy enable signal REDEN when the self-fuse data FZDATA_Scoincides with the input address ADD. During the normal ruptureoperation, the operation control block 120 and 130 may control the AREcircuit 110 to program target data FZDATA_IN (i.e., the defectiveaddress of the defective cells in the normal cell region 62) into thenormal fuse region 112 based on the input address ADD but to program thetarget data FZDATA_IN into fuse cells of the redundancy fuse region 116instead of the fuse cells of the normal fuse region 112 according to theredundancy enable signal REDEN.

Accordingly, the latch block 160 may store the defective address LADD ofthe defective fuse cells in the normal fuse region 112 during thepre-boot-up operation and the self-rupture operation and may store theself-fuse data FZDATA_S which is also the defective address LADD of thedefective fuse cell in the normal fuse region 112 and is read out fromthe self-repair fuse region 114 during the normal rupture operation andthe post-boot-up operation.

The semiconductor device may further include a boot-up control signalgeneration block 170, a rupture control signal generation block 180, andan address generation block 190.

The boot-up control signal generation block 170 may generate a boot-upcontrol signal BU_CTRL in response to a power-up signal PWRUP providedduring an initialization operation, i.e., a power-up operation.

The boot-up control signal generation block 170 may generate the boot-upcontrol signal BU_CTRL indicating the pre-boot-up operation when it isdetermined as the initial state when the ARE circuit 110 is notprogrammed and may generate the boot-up control signal BU_CTRLindicating the post-boot-up operation when it is determined that the AREcircuit 110 has been programmed.

Also, the boot-up control signal generation block 170 may output aboot-up termination signal BU_END when the pre-boot-up operation iscompleted.

Whether the ARE circuit 110 is programmed or not may be determined invarious ways. For example, whenever a program operation is performed onthe ARE circuit 110, a specific cell of a specific non-volatile memorymay be programmed, and the boot-up control signal generation block 170may read out data of the cell. In this manner, whether the ARE circuit110 is programmed or not may be determined.

The rupture control signal generation block 180 may generate a rupturecontrol signal RUP_CTRL indicating the self-rupture operation inresponse to the final flag signal FFLAG and the boot-up terminationsignal BU_END. In addition, the rupture control signal generation block180 may generate the rupture control signal RUP_CTRL indicating thenormal rupture operation in response to the rupture enable signal RUP_ENinputted from the external device.

The address generation block 190 may generate the input address ADDbased on the boot-up control signal BU_CTRL or the rupture controlsignal RUP_CTRL. The address generation block 190 may generate the inputaddress ADD corresponding to a target address ADD_IN inputted from theexternal device when the rupture control signal RUP_CTRL indicating thenormal rupture operation is inputted. Although FIG. 3 shows that thetarget address ADD_IN and the target data FZDATA_IN are separatesignals, the present invention is not limited thereto. According toembodiments, the target address ADD_IN included in the target dataFZDATA_IN may be transmitted.

FIG. 4 is a diagram illustrating a coupling of a non-volatile memory 110and peripheral constituents shown in FIG. 3.

Referring to FIG. 4, the ARE circuit 110 in accordance with anembodiment of the present invention may include the normal fuse region112, the self-repair fuse region 114, and the redundancy fuse region116, each having the plurality of fuse cells FC. The normal fuse region112 may be selectively programmed using program voltages PG<0:N>, andthe plurality of fuse cells FC coupled to row lines WL<0:N> and columnlines BL<0:Y> may be arranged in an array shape in the normal fuseregion 112. The self-repair fuse region 114 may be selectivelyprogrammed using program voltages SPG<0:M>, and the plurality of fusecells FC coupled to row lines SWL<0:M> and the column lines BL<0:Y> maybe arranged in an array shape in the self-repair fuse region 114. Theredundancy fuse region 116 may be selectively programmed using programvoltages RPG<0:K>, and the plurality of fuse cells FC coupled to rowlines RWL<0:K> and the column lines BL<0:Y> may be arranged in an arrayshape in the redundancy fuse region 116. The fuse cells FC of the normalfuse region 112, the self-repair fuse region 114 and the redundancy fuseregion 116 may have the same structure and share the column linesBL<0:Y>.

Each of the fuse cells FC may include a first NMOS transistor MN1 havinga source coupled to a source voltage terminal and a gate receiving acorresponding program voltage PG and a second NMOS transistor MN2 havinga source coupled to a drain of the first NMOS transistor, a draincoupled to a corresponding column line BL and a gate coupled to acorresponding row line WL. A voltage level of the source voltageterminal may vary depending on a level of the program voltage PG. Inother words, since it is only necessary to generate a gate-sourcevoltage Vgs, e.g., 6V, to the extent that a gate insulating film of thefirst NMOS transistor MN1 is destroyed, a ground voltage may be appliedto the source voltage terminal when the program voltage PG issufficiently high, and a negative voltage may be applied to the sourcevoltage terminal when the program voltage PG is low.

The program voltage PG may have a high voltage level to rupture the fusecells FC when the fuse cells FC are programmed, that is, during theself-rupture operation or the normal rupture operation. The programvoltage PG may have a voltage level that is lower than the high voltagelevel, i.e., a voltage level of approximately ½, when the fuse cells FCare read out, that is, during the pre-boot-up operation or thepost-boot-up operation. Therefore, during the rupture operations, whenone row line WL is selected, a plurality of the second NMOS transistorsMN2 coupled to the row line WL may be turned on, and a plurality of thefirst NMOS transistors MN1 may be coupled to the corresponding columnlines BL. When the column lines BL are sequentially selected, the firstNMOS transistors MN1 coupled to the selected column lines BL may besequentially programmed based on the program voltage having the highvoltage level. During the boot-up operations, when one row line WL isselected, the plurality of the second NMOS transistors coupled to therow line WL may be turned on, and the plurality of the first NMOStransistors MN1 may be coupled to the corresponding column lines BL. Thefuse data may be outputted at one time through the column lines BL basedon whether or not the first NMOS transistors MN1 are ruptured.

Referring back to FIG. 3, the operation control block 120 and 130 mayinclude a row operation control block 120 for selecting the row line WLof the ARE circuit 110 and applying the program voltage PG to theselected row line WL, and a column operation control block 130 forcontrolling the column line BL.

The row operation control block 120 may include a row control unit 122and a row circuit 124.

The row control unit 122 may output a fuse address FADD or a fuseaddress FSADD based on the boot-up control signal BU_CTRL, the rupturecontrol signal RUP_CTRL, the input address ADD and the redundancy enablesignal REDEN or the boot-up control signal BU_CTRL and the rupturecontrol signal RUP_CTRL. The fuse address FADD may be an address forselecting the row lines WL<0:N> of the normal fuse region 112 or the rowlines RWL<0:K> of the redundancy fuse region 116, and the fuse addressFSADD may be an address for selecting the row lines SWL<0:M> of theself-repair fuse region 114.

The row control unit 122 may output the fuse address FADD so that therow lines WL<0:N> of the normal fuse region 112 are sequentiallyselected during the pre-boot-up operation, and output the fuse addressFSADD so that the row lines SWL<0:M> of the self-repair fuse region 114are selected during the self-rupture operation. After outputting thefuse address FSADD so that the row lines SWL<0:M> of the self-repairfuse region 114 are selected during the post-boot-up operation, the rowcontrol unit 122 may output the fuse address FADD so that the row linesWL<0:N> of the normal fuse region 112 or the row lines RWL<0:K> of theredundancy fuse region 116 are selected based on the redundancy enablesignal REDEN. Besides, the row control unit 122 may output the fuseaddress FADD so that the row lines WL<0:N> of the normal fuse region 112or the row lines RWL<0:K> of the redundancy fuse region 116 are selectedbased on the redundancy enable signal REDEN during the normal ruptureoperation.

The row circuit 124 may select the row line WL of a specific fuse cellFC based on the fuse address FADD and the fuse address FSADD outputtedfrom the row control unit 122 and may apply the program voltage PG tothe selected row line WL.

The column operation control block 130 may include a column control unit132, a column circuit 134, and a sense amplification circuit 136.

The column control unit 132 may generate a column line selection signalBL_SEL and a sense amplification enable signal SAEN for selecting thecolumn lines BL<0:Y> based on the boot-up control signal BU_CTRL, therupture control signal RUP_CTRL, the input address ADD and the defectiveaddress LADD stored in the latch block 160.

The column control unit 132 may generate the column line selectionsignal BL_SEL and the sense amplification enable signal SAEN so that thecolumn lines BL<0:Y> are selected at one time based on the input addressADD during the pre-boot-up operation or the post boot-t up operation.The column control unit 132 may generate the column line selectionsignal BL_SEL and the sense amplification enable signal SAEN so that atleast one of the column lines BL<0:Y> is sequentially selected based onthe input address ADD and the defective address LADD stored in the latchblock 160 during the self-rupture operation. Besides, the column controlunit 132 may generate the column line selection signal BL_SEL and thesense amplification enable signal SAEN so that at least one of thecolumn lines BL<0:Y> is sequentially selected based on the input addressADD and the target address ADD_IN during the normal rupture operation.

The column circuit 134 may select a specific column line BL based on thecolumn line selection signal BL_SEL. The sense amplification circuit 136which is enabled based on the sense amplification enable signal SAEN maysense and amplify a level of the selected column line BL, therebyoutputting the level as the fuse data FZDATA_N, FZDATA_S and FZDATA_R.

Hereinafter, an operation of the semiconductor device shown in FIG. 3will be described with reference to FIGS. 3 to 8B.

FIGS. 5A and 5B are a flowchart and a block diagram, respectively,illustrating the pre-boot-up operation of the semiconductor device shownin FIG. 3.

Referring to FIGS. 5A and 5B, the boot-up control signal generationblock 170 may generate the boot-up control signal BU_CTRL in response tothe power-up signal PWRUP generated during the initialization operation,i.e., the power-up operation in step S510. The boot-up control signalgeneration block 170 may generate the boot-up control signal BU_CTRLindicating the pre-boot-up operation when the ARE circuit 110 isdetermined as in the initial state and thus not programmed.

Therefore, the semiconductor device may perform the pre-boot-upoperation in step S520.

The address generation block 190 may generate the input address ADDbased on the boot-up control signal BU_CTRL. The operation control block120 and 130 may read out the normal fuse data FZDATA_N of the normalfuse region 112 corresponding to the input address ADD based on theboot-up control signal BU_CTRL in step S530.

More specifically, based on the input address ADD and the boot-upcontrol signal BU_CTRL, the row operation control block 120 may generatethe fuse address FADD to select a first row line WL<0> of the normalfuse region 112, and the column operation control block 130 may generatethe column line selection signal BL_SEL and the sense amplificationenable signal SAEN so that the fuse data is outputted from the pluralityof fuse cells coupled to the first row line WL<0>. Thus, the normal fusedata FZDATA_N corresponding to the first row line WL<0> of the normalfuse region 112 may be read out. During the pre-boot-up operation, theprogram voltage PG<0> having the voltage level that is lower than thehigh voltage may be applied to the plurality of fuse cells coupled tothe first row line WL<0>, and the ground voltage may be applied to theother fuse cells.

The error detection block 140 may detect whether or not there is thedefective fuse cell that does not have the predetermined initial valueamong the fuse cells of the normal fuse region 112 based on the normalfuse data FZDATA_N in step S540. The normal fuse data FZDATA_N beforebeing ruptured may have a logic low level as a default value, whereasthe normal fuse data FZDATA_N outputted from the defective fuse cellscaused by process defects may have a logic high level.

When the normal fuse data FZDATA_N is not the logic low level (“YES” instep S540), the error detection block 140 may generate the error flagsignal FLAG by determining the row line WL<0> as a defect, and the latchblock 160 may store the input address ADD, which is inputted when theerror flag signal FLAG is generated, as the defective address LADD instep S550.

Since the input address ADD does not correspond to a last row line WL<N>of the normal fuse region 112 (“NO” in step S560), the addressgeneration block 190 may sequentially increase the input address ADD instep S570.

The operation control block 120 and 130 may repeat the above-describedoperations S530 to S570 to detect the defective fuse cells by readingout the normal fuse data FZDATA_N of the normal fuse region 112corresponding to the input address ADD.

When the operations S530 to S570 are completed as the input address ADDcorresponding to the last row line WL<N> of the normal fuse region 112is inputted (“YES” in step S560), the boot-up control signal generationblock 170 may output the boot-up termination signal BU_END in step S580.In this case, the error detection block 140 may output the final flagsignal FFLAG according to the generated error flag signal FLAG.

As described above, through the pre-boot-up operation, the defectivefuse cells of the normal fuse region 112 may be detected and thedefective address may be stored in the latch block 160.

Since the pre-boot-up operation is performed before the repair operationis performed on the defects of the memory array region 60 shown in FIG.1, the fuse data outputted from the ARE circuit 110 may not be adefective address of a defective cell in the memory array region 60 butmay have the predetermined initial value, and thus may not be stored inthe latch circuit 70 shown in FIG. 1.

Although it is described in the embodiment of the present invention thatthe pre-boot-up operation is performed only on the normal fuse region112, the present invention is not limited to this. According toembodiments, the pre-boot-up operation may be performed on theself-repair fuse region 114 and the redundancy fuse region 116, and inthis case, a row line having defective fuse cells may be disabled in theself-repair fuse region 114 and the redundancy fuse region 116.

FIGS. 6A and 6B are a flowchart and a block diagram, respectively,illustrating the self-rupture operation of the semiconductor deviceshown in FIG. 3.

Hereinafter, it is assumed for the sake of convenience in description,that an eighth row line WL<7> and a 101^(st) row line WL<100> of thenormal fuse region 112 are detected as defective row lines and addressescorresponding to the defective row lines are stored as the defectiveaddress LADD in the latch block 160 during the pre-boot up operation.

Referring to FIGS. 6A and 6B, when the final flag signal FFLAG and theboot-up termination signal BU_END are generated in step S610, therupture control signal generation block 180 may automatically generatethe rupture control signal RUP_CTRL indicating the self-ruptureoperation. Accordingly, the semiconductor device may perform theself-rupture operation in step S620.

The operation control block 120 and 130 may program the defectiveaddress LADD stored in the latch block 160 into the self-repair fuseregion 114 corresponding to the input address ADD based on the rupturecontrol signal RUP_CTRL in step S630.

More specifically, the address generation block 190 may generate theinput address ADD corresponding to the self-repair fuse region 114 basedon the rupture control signal RUP_CTRL. The latch block 160 may outputthe defective address LADD corresponding to the input address ADD basedon the rupture control signal RUP_CTRL.

Based on the rupture control signal RUP_CTRL and the input address ADD,the row operation control block 120 may generate the fuse address FSADDso as to select a first row line SWL<0> of the self-repair fuse region114, and the column operation control block 130 may generate the columnline selection signal BL_SEL and the sense amplification enable signalSAEN so that the defective address LADD stored in the latch block 160 issequentially programmed into the plurality of fuse cells coupled to thefirst row line SWL<0>. Accordingly, an address corresponding to theeighth row line WL<7> may be programmed into the fuse cells coupled tothe first row line SWL<0> of the self-repair fuse region 114. During theself-rupture operation, the program voltage SPG<0> having the highvoltage level may be applied to the plurality of fuse cells coupled tothe first row line SWL<0>, and the ground voltage may be applied to theother fuse cells.

Subsequently, the address generation block 190 may generate the inputaddress ADD which increases sequentially. The row operation controlblock 120 and the column operation control block 130 may program anaddress corresponding to the 101^(st) row line WL<100> into a second rowline SWL<1> of the self-repair fuse region 114 based on the rupturecontrol signal RUP_CTRL and the input address ADD.

As described above, through the self-rupture operation, the defectiveaddress LADD corresponding to the eighth row line WL<7> and the 101^(st)row line WL<100> of the normal fuse region 112 stored in the latch block160 may be programmed as the self-fuse data FZDATA_S into theself-repair fuse region 114.

FIGS. 7A and 7B are a flowchart and a block diagram, respectively,illustrating the post-boot-up operation of the semiconductor deviceshown in FIG. 3.

Referring to FIGS. 7A and 7B, the boot-up control signal generationblock 170 may generate the boot-up control signal BU_CTRL in response tothe power-up signal PWRUP in step S710. The boot-up control signalgeneration block 170 may generate the boot-up control signal BU_CTRLindicating the post-boot-up operation after the ARE circuit 110 isprogrammed, that is, the self-rupture operation is performed.Accordingly, the semiconductor device may perform the post-boot-upoperation in step S720.

The operation control block 120 and 130 may read out the self-fuse dataFZDATA_S corresponding to the input address ADD from the self-repairfuse region 114 and store self-fuse data FZDATA_S, which is thedefective address LADD of the defective fuse cell in the normal fuseregion 112, in the latch block 160 based on the boot-up control signalBU_CTRL in step S730.

More specifically, the address generation block 190 may generate theinput address ADD based on the boot-up control signal BU_CTRL. Based onthe boot-up control signal BU_CTRL and the input address ADD, the rowoperation control block 120 may generate the fuse address FSADD so as tosequentially select row lines SWL<0:1> of the self-repair fuse region114, and the column operation control block 130 may read out theself-fuse data FZDATA_S outputted from the selected row lines SWL<0:1>.The latch block 160 may store the self-fuse data FZDATA_S based on theinput address ADD. Accordingly, the self-fuse data FZDATA_Scorresponding to the eighth row line WL<7> and the 101^(st) row lineWL<100> of the normal fuse region 112 may be stored in the latch block160.

Subsequently, the address generation block 190 may initialize the inputaddress ADD so that the normal fuse data FZDATA_N of the normal fuseregion 112 are outputted in step S740. Accordingly, the row operationcontrol block 120 may generate the fuse address FADD so as to select thefirst row line WL<0> of the normal fuse region 112.

The comparison block 150 may compare the self-fuse data FZDATA_S storedin the latch block 160 with the input address ADD in step S750.

When the self-fuse data FZDATA_S stored in the latch block 160 does notcoincide with the input address ADD as a result of the comparison (“NO”in step S750), the operation control block 120 and 130 may read out thenormal fuse data FZDATA_N from the fuse cells coupled to the row line WLof the normal fuse region 112 corresponding to the input address ADD instep S760.

When the input address ADD does not correspond to the last row lineWL<N> of the normal fuse region 112 (“NO” in step S780), the addressgeneration block 190 may sequentially increase the input address ADD instep S790.

When the input address ADD corresponds to the eighth row line WL<7> andthe 101^(st) row line WL<100> of the normal fuse region 112 (“YES” instep S750), the comparison block 150 may generate the redundancy enablesignal REDEN and the operation control block 120 and 130 may read outthe redundancy fuse data FZDATA_R from the fuse cells coupled to rowlines RWL<0:1> of the redundancy fuse region 116 instead of the normalfuse region 112 in step S770.

Until the input address ADD corresponding to the last row line WL<N> ofthe normal fuse region 112 is generated (“YES” in step S780), theoperation control block 120 and 130 may repeat the above-describedoperations S750 to S780 to read out the normal fuse data FZDATA_N fromthe normal fuse region 112 corresponding to the input address ADD or theredundancy fuse data FZDATA_R from the redundancy fuse region 116.

As described above, through the post-boot-up operation, when theself-fuse data FZDATA_S of the self-repair fuse region 114 (i.e., thedefective address LADD corresponding to the defective row line of thenormal fuse region 112) coincides with the input address ADD while thenormal fuse data FZDATA_N of the normal fuse region 112 corresponding tothe input address ADD is read out, the redundancy fuse data FZDATA_R ofthe redundancy fuse region 116 instead of the normal fuse region 112 maybe read out.

Since the post-boot-up operation is performed after the repair operationis performed on the defects of the memory array region 60 shown in FIG.1, the normal fuse data FZDATA_N or the redundancy fuse data FZDATA_R,which is read out, may be stored in the latch circuit 70 shown in FIG. 1and may be used when the repair operation is performed on the normalmemory array region 62 of the memory array region 60.

FIGS. 8A and 8B are a flowchart and a block diagram, respectively,illustrating the normal rupture operation of the semiconductor deviceshown in FIG. 3.

Referring to FIGS. 8A and 8B, the rupture control signal generationblock 180 may generate the rupture control signal RUP_CTRL indicatingthe normal rupture operation in response to the rupture enable signalRUP_EN inputted from the external device in step S810. Accordingly, thesemiconductor may perform the normal rupture operation in step S820.

Since the normal rupture operation is performed after the post-boot-upoperation, which is described above with reference to FIGS. 7A and 7B,the self-fuse data FZDATA_S corresponding to the eighth row line WL<7>and the 101^(st) row line WL<100> of the normal fuse region 112 may bealready stored in the latch block 160.

The address generation block 190 may generate the input address ADDcorresponding to the target address ADD_IN inputted from the externaldevice based on the rupture control signal RUP_CTRL. The comparisonblock 150 may compare the self-fuse data FZDATA_S stored in the latchblock 160 with the input address ADD in step S830.

When the target address ADD_IN coincides with the eighth row line WL<7>and the 101^(st) row line WL<100> of the normal fuse region 112, thecomparison block 150 may generate the redundancy enable signal REDEN.

When the target address ADD_IN does not coincide with the eighth rowline WL<7> and the 101^(st) row line WL<100> of the normal fuse region112 (“NO” in step S830), the operation control block 120 and 130 mayprogram the target data FZDATA_IN into the fuse cells coupled to the rowline WL of the normal fuse region 112 corresponding to the input addressADD in step S840.

On the other hand, when the target address ADD_IN coincides with theeighth row line WL<7> and the 101^(st) row line WL<100> of the normalfuse region 112 (“YES” in step S830), the redundancy enable signal REDENis generated and the operation control block 120 and 130 may program thetarget data FZDATA_IN into the fuse cells coupled to the row linesRWL<0:1> of the redundancy fuse region 116 instead of the normal fuseregion 112 in step S850.

Therefore, when the eighth row line WL<7> and the 101^(st) row lineWL<100> of the normal fuse region 112 are selected, the target dataFZDATA_IN may be programmed into the row lines RWL<0:1> of theredundancy fuse region 116.

Until the input address ADD corresponding to the last target addressADD_IN of the normal fuse region 112 is generated in step S860, theoperation control block 120 and 130 may repeat the above-describedoperations S830 to S850 to program the target data FZDATA_IN into thenormal fuse region 112 or the redundancy fuse region 116 correspondingto the input address ADD.

As described above, through the normal rupture operation, in a casewhere the self-fuse data FZDATA_S which is already stored in the latchblock 160, that is, the defective address LADD corresponding to thedefective row line of the normal fuse region 112 coincides with theinput address ADD while the target data FZDATA_IN is sequentiallyprogrammed into the normal fuse region 112 corresponding to the inputaddress ADD, the target data FZDATA_IN may be programmed into the fusecells of the redundancy fuse region 116 instead of the normal fuseregion 112.

The pre-boot-up operation, the self-rupture operation, the post-boot-upoperation and the normal rupture operation of the semiconductor deviceas described above with reference to FIGS. 5A to 8B may correspond tothe pre-boot-up operation, the self-program operation, the post-boot-upoperation and the normal program operation as described with referenceto FIG. 2, respectively. In other words, in accordance with anembodiment of the present invention as described above, as the defectivefuse cells of the normal region 112 included in the ARE circuit 110 arereplaced with the fuse cells of the redundancy region 116 through thepre-boot-up operation, the self-rupture operation and the post-boot-upoperation before the wafer repair operation and the package repairoperation are performed, therefore the yield of the semiconductor devicemay be improved.

FIG. 9 is a block diagram illustrating a semiconductor device for acolumn repair in accordance with an embodiment of the present invention.

Referring to FIG. 9, the semiconductor device may include a non-volatilememory 310, an operation control block 320 and 330 for controlling anoperation of the non-volatile memory 310, an error detection block 340,and a latch block 360. In addition, the semiconductor device may furtherinclude a boot-up control signal generation block 370, a rupture controlsignal generation block 380, and an address generation block 390.

The operation control block 320 and 330 may include a row operationcontrol block 320 and a column operation control block 330. The rowoperation control block 320 may include a row control unit 322 and a rowcircuit 324, the column operation control block 330 may include a columncontrol unit 332, a column circuit 334, and a sense amplificationcircuit 336. Since FIG. 9 is substantially the same as FIG. 3,overlapping descriptions will be omitted.

In a case where the non-volatile memory 310 is composed of an arrayE-fuse (ARE) circuit, the non-volatile memory 310 or the array E-fuse(ARE) circuit may include a plurality of fuse cells FC disposed at crosspoints of row lines WL and column lines BL. The ARE circuit 310 mayinclude a normal fuse region 312, a self-repair fuse region 314, and aredundancy fuse region 316, each having the plurality of fuse cells FC.

The semiconductor device for the row repair of FIG. 3 may replace therow line WL of the normal fuse region 112 with the row line RWL of theredundancy fuse region 116, whereas the semiconductor device for thecolumn repair of FIG. 9 may replace a column line BL of the normal fuseregion 312 with a column line RBL of the redundancy fuse region 316.

FIG. 10 is a block diagram illustrating a coupling of a non-volatilememory 310 and peripheral constituents shown in FIG. 9.

Referring to FIG. 10, the normal fuse region 312 included in the AREcircuit 310 may be selectively programmed using program voltagesPG<0:N>, and the plurality of fuse cells FC coupled to row lines WL<0:N>and column lines BL<0:Y> may be arranged in an array shape in the normalfuse region 312. The self-repair fuse region 314 may be selectivelyprogrammed using program voltages SPG<0:M>, and the plurality of fusecells FC coupled to row lines SWL<0:M> and the column lines BL<0:Y> maybe arranged in an array shape in the self-repair fuse region 314. Theredundancy fuse region 316 may be selectively programmed using programvoltages PG<0:N> and SPG<0:M>, and the plurality of fuse cells FCcoupled to the row lines WL<0:N> and SWL<0:M> and column lines RBL<0:K>may be arranged in an array shape in the redundancy fuse region 316. Thefuse cells FC of the normal fuse region 312, the self-repair fuse region314 and the redundancy fuse region 316 may have the same structure, andthe redundancy fuse region 316 may have the column lines RBL<0:K> whichare distinct from the column lines BL<0:Y> of the normal fuse region312.

Referring back to FIG. 9, the operation control block 320 and 330 maycontrol an operation of the ARE circuit 310 based on an input addressADD. The operation control block 320 and 330 may control the ARE circuit310 to read out normal fuse data FZDATA_N of the normal fuse region 312during the pre-boot-up operation, to program a defective address BLADDstored in the latch block 360 into the self-repair fuse region 314during the self-rupture operation and to sequentially read out self-fusedata FZDATA_S of the self-repair fuse region 314 and the normal fusedata FZDATA_N of the normal fuse region 312 during the post-boot-upoperation but to read out the normal fuse data FZDATA_N by performing acontrol to select the column lines RBL<0:K> of the redundancy fuseregion 316 instead of the column lines BL<0:Y> of the normal fuse dataFZDATA_N based on the self-fuse data FZDATA_S.

The error detection block 340 may detect defective fuse cells of thenormal fuse region 312 based on the normal fuse data FZDATA_N, which isread out during the pre-boot-up operation, to store the defectiveaddress BLADD in the latch block 360. The error detection block 340 maygenerate an error flag signal FLAG when a defective fuse cell that doesnot have a predetermined initial value among the fuse cells of thenormal fuse region 312 is detected, and the latch block 360 may storethe normal fuse data FZDATA_N, which is inputted when the error flagsignal FLAG is generated, as the defective address BLADD. The errordetection block 340 may output a final flag signal FFLAG according tothe generated error flag signal FLAG.

Differently from the latch block 160 shown in FIG. 3, the latch block360 shown in FIG. 9 may store the normal fuse data FZDATA_N havingcolumn information instead of the input address ADD having rowinformation. Accordingly, the semiconductor device of FIG. 9 does notneed a comparison block for comparing the defective address BLADD storedin the latch block 360 with the input address ADD. However, as thecolumn control unit 332 receives the defective address BLADD stored inthe latch block 360 and generates a redundancy column line selectionsignal RBL_SEL capable of replacing the column line RBL of theredundancy fuse region 316 instead of a column line selection signalBL_SEL that selects the column line BL of the normal fuse region 312,the defective cells may be repaired.

Hereinafter, an operation of the semiconductor device shown in FIG. 9will be described with reference to FIGS. 9 to 14.

FIG. 11 is a block diagram illustrating the pre-boot-up operation of thesemiconductor device shown in FIG. 9.

Referring to FIG. 11, the boot-up control signal generation block 370may generate a boot-up control signal BU_CTRL indicating the pre-boot-upoperation in response to a power-up signal PWRUP, and hence the addressgeneration block 390 may generate the input address ADD based on theboot-up control signal BU_CTRL.

The row operation control block 320 may generate a fuse address FADD soas to select the row line WL of the normal fuse region 312 correspondingto the input address ADD, and the column operation control block 330 maygenerate the column line selection signal BL_SEL and a senseamplification enable signal SAEN so that the normal fuse data FZDATA_Nis outputted from the plurality of fuse cells coupled to the selectedrow line WL. Thus, the normal fuse data FZDATA_N of the normal fuseregion 312 may be read out.

The error detection block 340 may detect whether or not there are thedefective fuse cells among the fuse cells of the normal fuse region 312based on the normal fuse data FZDATA_N to generate the error flag signalFLAG, and the latch block 360 may store the normal fuse data FZDATA_N,which is inputted when the error flag signal FLAG is generated, as thedefective address BLADD. As the normal fuse data FZDATA_N, not the inputaddress ADD, is stored as the defective address BLADD, information ondefective column lines of the normal fuse data FZDATA_N may be stored.

FIG. 12 is a block diagram illustrating the self-rupture operation ofthe semiconductor device shown in FIG. 9.

Hereinafter, it is assumed for the sake of convenience in description,that an eighth column line BL<7> and a 101^(st) column line BL<100> ofthe normal fuse region 312 are detected as defective column lines andthe normal fuse data FZDATA_N corresponding to the defective columnlines is stored as the defective address BLADD in the latch block 360during the pre-boot up operation.

Referring to FIG. 12, when the final flag signal FFLAG and a boot-uptermination signal BU_END are generated, the rupture control signalgeneration block 380 may generate a rupture control signal RUP_CTRLindicating the self-rupture operation.

Accordingly, the address generation block 390 may generate the inputaddress ADD corresponding to the self-repair fuse region 314. The latchblock 360 may output the defective address BLADD corresponding to theinput address ADD based on the rupture control signal RUP_CTRL.

The row operation control block 320 may generate a fuse address FSADD soas to select the row lines SWL<0:M> of the self-repair fuse region 314,and the column operation control block 330 may generate the column lineselection signal BL_SEL and the sense amplification enable signal SAENso that the defective address BLADD stored in the latch block 360 issequentially programmed into the plurality of fuse cells coupled to therow lines SWL<0:M>. Thus, information corresponding to the eighth columnline BL<7> and the 101^(st) column line BL<100> of the normal fuseregion 312 may be programmed into the row lines SWL<0:1> of theself-repair fuse region 314.

FIG. 13 is a block diagram illustrating the post-boot-up operation ofthe semiconductor device shown in FIG. 9.

Referring to FIG. 13, the boot-up control signal generation block 370may generate the boot-up control signal BU_CTRL indicating thepost-boot-up operation in response to the power-up signal PWRUP, andhence the address generation block 390 may generate the input addressADD based on the boot-up control signal BU_CTRL.

The row operation control block 320 may generate the fuse address FSADDso as to sequentially select row lines SWL<0:1> of the self-repair fuseregion 314, and the column operation control block 330 may read out theself-fuse data FZDATA_S outputted from the selected row lines SWL<0:1>.Accordingly, the self-fuse data FZDATA_S corresponding to the eighthcolumn line BL<7> and the 101^(st) column line BL<100> of the normalfuse region 312 may be stored in the latch block 360.

Subsequently, the address generation block 390 may initialize the inputaddress ADD, and the row control unit 322 may generate the fuse addressFADD so that the row lines WL<0:N> of the normal fuse region 312 aresequentially selected.

In this case, the latch block 360 may provide the defective addressBLADD to the column control unit 332. The column control unit 332 maygenerate the column line selection signal BL_SEL and the redundancycolumn line selection signal RBL_SEL so that the eighth column lineBL<7> and the 101^(st) column line BL<100> of the normal fuse region 312corresponding to the defective address BLADD are replaced with columnlines RBL<0:1> of the redundancy fuse region 316.

Therefore, the semiconductor device may sequentially read out the normalfuse data FZDATA_N of the normal fuse region 312 corresponding to theinput address ADD by controlling the column lines RBL<0:1> of theredundancy fuse region 316 to be selected instead of the defectivecolumn lines of the normal fuse region 312.

FIG. 14 is a block diagram illustrating the normal rupture operation ofthe semiconductor device shown in FIG. 9.

Referring to FIG. 14, the rupture control signal generation block 380may generate the rupture control signal RUP_CTRL indicating the normalrupture operation in response to a rupture enable signal RUP_EN inputtedfrom an external device.

Since the normal rupture operation is performed after the post-boot-upoperation, which is described above with reference to FIG. 13, isperformed, the self-fuse data FZDATA_S corresponding to the eighthcolumn line BL<7> and the 101^(st) column line BL<100> of the normalfuse region 312 may be already stored in the latch block 360.

The address generation block 390 may generate the input address ADDcorresponding to a target address ADD_IN inputted from the externaldevice based on the rupture control signal RUP_CTRL.

The row control unit 322 may generate the fuse address FADD so that therow lines WL<0:N> of the normal fuse region 312 are sequentiallyselected.

In this case, the latch block 360 may provide the defective addressBLADD to the column control unit 332. The column control unit 332 maygenerate the column line selection signal BL_SEL and the redundancycolumn line selection signal RBL_SEL so that the eighth column lineBL<7> and the 101^(st) column line BL<100> of the normal fuse region 312corresponding to the defective address BLADD are replaced with columnlines RBL<0:1> of the redundancy fuse region 316.

Therefore, the semiconductor device may sequentially program the targetaddress ADD_IN into the normal fuse region 312 corresponding to theinput address ADD by controlling the column lines RBL<0:1> of theredundancy fuse region 316 to be selected instead of the defectivecolumn lines of the normal fuse region 312.

In accordance with the embodiments of the present invention described asabove, a non-volatile memory includes redundancy fuse cells forrepairing defective fuse cells, and when the defective fuse cells aredetected during the boot-up operation, the defective fuse cells arereplaced with the redundancy fuse cells, whereby the yield of asemiconductor device may be improved.

While the present invention has been described with respect to specificembodiments, the embodiments are not intended to be restrictive, butrather descriptive. Further, it is noted that the present invention maybe achieved in various ways through substitution, change, andmodification, by those skilled in the art without departing from thespirit and/or scope of the present invention as defined by the followingclaims.

Also, dispositions and types of the logic gates and transistorsdescribed in the aforementioned embodiments may be implementeddifferently based on the polarity of the inputted signal.

What is claimed is:
 1. An operating method for a semiconductor device,comprising: providing a non-volatile memory including a normal region, aself-repair region and a redundancy region, each having a plurality ofcells; performing a first boot-up operation to detect defective cells ofthe normal region and store a defective address in a latch block;performing a self-program operation to program the defective addressstored in the latch block into the self-repair region; and performing asecond boot-up operation to sequentially read out data of the normalregion based on an input address while outputting data of the redundancyregion instead of the data of the normal region when data of theself-repair region coincides with the input address.
 2. The operatingmethod of claim 1, wherein the first boot-up operation is performed inan initial state where the non-volatile memory is not programmed, andthe second boot-up operation is performed after the non-volatile memoryis programmed.
 3. The operating method of claim 1, wherein theself-program operation is performed when the defective cells of thenormal region are detected during the first boot-up operation,regardless of whether or not an external command is inputted.
 4. Theoperating method of claim 1, wherein the first boot-up operationincludes: generating an error flag signal when a cell which does nothave a predetermined initial value among the cells of the normal regionis detected; and storing the input address, which is inputted when theerror flag signal is generated, as the defective address in the latchblock.
 5. The operating method of claim 4, wherein the self-programoperation is performed in response to the error flag signal and aboot-up termination signal indicating completion of the first boot-upoperation.
 6. The operating method of claim 1, wherein the secondboot-up operation includes: sequentially storing the data of theself-repair region in the latch block; comparing the data stored in thelatch block with the input address and activating a redundancy enablesignal when the data stored in the latch block coincides with the inputaddress as a result of the comparison; and sequentially reading out thedata of the normal region while outputting the data of the redundancyregion instead of the data of the normal region when the redundancyenable signal is generated.
 7. The operating method of claim 1, furthercomprising: generating defective addresses of the defective cells, whichare detected through a test operation performed on a memory arrayregion, as target data after the second boot-up operation is performed;and performing a normal program operation to program the target datainto the normal region corresponding to the input address based on aprogram enable signal while programming the target data into the cellsof the redundancy region instead of the cells of the normal region whenthe data of the self-repair region coincides with the input address. 8.The operating method of claim 7, wherein the second boot-up operation isadditionally performed after the normal program operation is performed.9. The operating method of claim 7, wherein the normal regionpermanently stores the defective addresses of the defective cells of thememory array region, wherein the self-repair region permanently storesthe defective addresses of the defective cells of the normal region, andwherein the redundancy region is provided for repairing the defectivecells of the normal region and permanently stores the defectiveaddresses of the defective cells of the memory array region instead ofthe defective cells of the normal region.